MATLAB: Negative Capacitance (NC) FET Model
Category
Published on
Abstract
MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.
Gate-source and gate-drain overlap and fringing capacitances and flat-band potential are considered in the model. Corresponding input parameters: r_C=C_ov/C_ox and flat-band potential (V<sub>fb</sub>). Coefficients of different ferroelectric dielectrics are provided. There is a provision to include multi-layers gate NC dielectric stack.
Version 1.0.0
Cite this work
Researchers should cite this work as follows: