ABACUS Bipolar Junction Transistors (Spring 2022)

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on


Run ABACUS Tool Suite In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles, layer thicknesses, and material systems (Si, Ge, GaAs) can be explored. Bipolar-Junction-Transistor-Lab computes internal device quantities such as charge profiles, band edge profiles, and recombination rates at equilibrium and applied bias throughout the length of the device. It also computes the terminal currents in the form of a Gummel plot as well as common emitter output current. The transistor beta is explicitly computed as a function of collector current. Students can also explore intricate consequences of different minority carrier lifetimes. Bipolar-Junction-Transistor-Lab is powered by the industrial tool PADRE which was used at Bell Labs to design transistors.

An earlier verson, Winter 2021, of this presentation can be found here.

ABACUS Bipolar Junction Transistors tool

Sponsored by

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck (2022), "ABACUS Bipolar Junction Transistors (Spring 2022)," https://nanohub.org/resources/36069.

    BibTex | EndNote