By Anisur Rahman1; (unknown)1; Jing Guo2; Md. Sayed Hasan1; Yang Liu3; Akira Matsudaira4; Shaikh S. Ahmed5; Supriyo Datta1; Mark Lundstrom1
1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Version 1.3s - published on 27 Mar 2015
doi:10.4231/D38S4JQ3J cite this
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