FETToy

By Anisur Rahman1; (unknown)1; Jing Guo2; Md. Sayed Hasan1; Yang Liu3; Akira Matsudaira4; Shaikh S. Ahmed5; Supriyo Datta1; Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

Launch Tool

You must login before you can run this tool.

Version 1.3s - published on 27 Mar 2015

doi:10.4231/D38S4JQ3J cite this

Open source: license | download

View All Supporting Documents

    SCREENSHOT #1 SCREENSHOT #2 DEMO #1 SCREENSHOT #3

Category

Tools

Published on

Abstract

FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.Additional related documents are:

Credits

The underlying theory is described in detail in A. Rahman, J. Guo, S. Datta, and M.
Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on
Electron Devices, 50, pp. 1853-1864, 2003
. This theory extends on
work by Natori (J. Appl. Phys., 76, 4879-4890, 1994) by including 2D
electrostatics and the so-called "quantum capacitance".

Cite this work

Researchers should cite this work as follows:

  • A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on Electron Devices, 50, pp. 1853-1864, 2003.
  • Anisur Rahman, , Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom (2015), "FETToy," https://nanohub.org/resources/fettoy. (DOI: 10.4231/D38S4JQ3J).

    BibTex | EndNote

Tags