Fundamentals of Nanotransistors
30 Jan 2022 | | Contributor(s):: Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
Fundamentals of Current Flow
30 Jan 2022 | | Contributor(s):: Supriyo Datta
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...
IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
1-D Phonon BTE Solver
28 Jul 2014 | | Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Exploring New Channel Materials for Nanoscale CMOS
27 Jun 2013 | | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
27 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Landauer Approach to Thermoelectrics
21 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
Nanoscale Transistors Lecture 6: Ballistic Model
ECE 656 Lecture 40: Ballistic Transport in Devices II
20 Dec 2011 | | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET
ECE 656 Lecture 39: Ballistic Transport in Devices I
Outline:Transport across a barrierTransport across a thin baseHigh-field collectorsQuestions?
Dissipative Quantum Transport in Semiconductor Nanostructures
23 Dec 2011 | | Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...
ECE 656 Lecture 29: The BTE Revisited - Equilibrium and Ballistic
11 Nov 2011 | | Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary
ECE 656 Lecture 5: Modes and Transmission
16 Sep 2011 | | Contributor(s):: Mark Lundstrom