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ECE 656 Lecture 39: Ballistic Transport in Devices I
Online Presentations | 09 Feb 2012 | Contributor(s):: Mark Lundstrom
Outline:Transport across a barrierTransport across a thin baseHigh-field collectorsQuestions?
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ECE 656 Lecture 40: Ballistic Transport in Devices II
Online Presentations | 21 Feb 2012 | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2006 teaching ECE 612 Lecture 10: The Ballistic MOSFET
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ECE 656 Lecture 5: 1D Resistors
Online Presentations | 14 Sep 2009 | Contributor(s):: Mark Lundstrom
Outline:Review1D ballistic resistors1D diffusive resistorsDiscussionSummary
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ECE 656 Lecture 5: Modes and Transmission
Online Presentations | 16 Sep 2011 | Contributor(s):: Mark Lundstrom
Outline:ModesTransmissionDiscussionSummary
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ECE 656 Lecture 6: Discussion
Online Presentations | 18 Sep 2009 | Contributor(s):: Mark Lundstrom
OutlineQuantum confinement and effective massBulk 1D transport and mfpPeriodic vs. Box boundary conditionsThermal velocities"Ballistic mobility"
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ECE 656 Lecture 7: 2 and 3D Resistors
Online Presentations | 27 Sep 2009 | Contributor(s):: Mark Lundstrom
Outline:Another view of the same problem2D resistorsDiscussion3D resistorsSummary
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ECE 656 Lecture 7: Resistance - Ballistic to Diffusive
Online Presentations | 16 Sep 2011 | Contributor(s):: Mark Lundstrom
Outline:Review2D ballistic resistors2D diffusive resistorsDiscussionSummary
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ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
Online Presentations | 21 Jan 2009 | Contributor(s):: Supriyo Datta
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Electron Transport in Schottky Barrier CNTFETs
Papers | 24 Oct 2017 | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Exploring New Channel Materials for Nanoscale CMOS
Papers | 28 Jun 2013 | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...
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Fundamentals of Current Flow
Papers | 30 Jan 2022 | Contributor(s):: Supriyo Datta
Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...
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Fundamentals of Nanotransistors
Papers | 30 Jan 2022 | Contributor(s):: Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
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Heat Transfer across Solid Contacts Enhanced with Nanomaterials
Online Presentations | 11 Feb 2008 | Contributor(s):: Timothy S Fisher
This presentation will describe thermal transport processes at solid-solid material interfaces. An overview of applications in the electronics industry will serve to motivate the subject, and then the basic diffusive constriction theory will be developed. The addition of carbon nanotube arrays to...
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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
Online Presentations | 15 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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Landauer Approach to Thermoelectrics
Papers | 23 Jun 2013 | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
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Lecture 3: Resistance-Ballistic to Diffusive
Online Presentations | 28 Jul 2011 | Contributor(s):: Mark Lundstrom
The resistance of a ballistic conductor and concepts, such as the quantumcontact resistance, are introduced and discussed. The results are then generalized to treat transport all the way from the ballistic to diffusive regimes.
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Lecture 3A: The Ballistic MOSFET
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
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Lecture 3B: The Ballistic MOSFET
Online Presentations | 10 Sep 2008 | Contributor(s):: Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
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Mani Kandan
https://nanohub.org/members/119445
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Nano Carbon: From ballistic transistors to atomic drumheads
Online Presentations | 14 May 2008 | Contributor(s):: Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an impenetrable membrane a single atom thick. Rolled up into a nanometer-diameter cylinder--a carbon...