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  1. Illinois ECE 440: Solid State Electronic Devices

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    Courses | 18 Aug 2008 | Contributor(s):: Eric Pop

    The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic...

  2. Illinois ECE 440: Solid State Electronic Devices Homework Assignments (Fall 2009)

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    Courses | 28 Jan 2010 | Contributor(s):: Mohamed Mohamed

    Homework assignments for the Fall 2009 teaching of Illinois ECE 440: Solid State Electronic Devices.

  3. Illinois Tools: Basic Bulk Silicon Transport Data at 300K

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    Tools | 27 Oct 2009 | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan

    Calculations of doped bulk silicon transport data (new version release)

  4. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

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    Papers | 26 Jun 2013 | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

  5. Intro to MOS-Capacitor Tool

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    Tools | 09 Jan 2013 | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  6. James T. Teherani

    James Teherani joined Columbia University as anassistant professor in the Department of Electrical Engineering in 2015. He received his BS in electrical and computer engineering from the University...

    https://nanohub.org/members/37606

  7. Jeronimo Peralta

    PhD in Physics, University of Buenos AiresResearcher in transport phenomena, device physics.

    https://nanohub.org/members/101149

  8. Katie M Smith

    https://nanohub.org/members/38245

  9. Landauer Approach to Thermoelectrics

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    Papers | 21 Jun 2013 | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  10. Lecture 10: Interface Damage & Negative Bias Temperature Instability

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    Online Presentations | 29 Jul 2009 | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  11. Lecture 7: On Reliability and Randomness in Electronic Devices

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    Online Presentations | 29 Jul 2009 | Contributor(s):: Muhammad A. Alam

    Outline:Background informationPrinciples of reliability physicsClassification of Electronic ReliabilityStructure Defects in Electronic MaterialsConclusions

  12. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

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    Online Presentations | 29 Jul 2009 | Contributor(s):: Muhammad A. Alam

  13. Lecture 9: Breakdown in Thick Dielectrics

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    Online Presentations | 29 Jul 2009 | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  14. Leyla Başak Büklü

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  15. Marcelo Kuroda

    Marcelo Kuroda received his B.S. in Physics in 2002 from the University of Buenos Aires in Argentina and Ph.D. program in Physics at the University of Illinois – Urbana Champaign in 2009. In...

    https://nanohub.org/members/5437

  16. MD YASIR BASHIR

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  17. Mehedi Hossen Limon

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  18. Muhammad Aminul Haque Chowdhury

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  19. Nadim Chowdhury

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  20. Nanoscale MOSFETS: Physics, Simulation and Design

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    Papers | 27 Jun 2013 | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...