Tags: MOSFET

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Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Resources (141-153 of 153)

  1. Silvaco TCAD

    28 Sep 2022 | | Contributor(s):: Eric Guichard, Silvaco, Inc.

    SILVACO Semiconductor Process and Device Simulation for Educational Purposes Only, see License below.

  2. Simulation of highly idealized, atomic scale MQCA logic circuits

    out of 5 stars 

    15 Nov 2007 | | Contributor(s):: Dmitri Nikonov, George Bourianoff

    Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with relaxation. The devices are shown to satisfy requirements for...

  3. The MVS Nanotransistor Model: A Primer

    out of 5 stars 

    17 Nov 2014 | | Contributor(s):: Mark Lundstrom

    In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...

  4. Threshold voltage in a nanowire MOSFET

    out of 5 stars 

    09 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

    Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...

  5. Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

    out of 5 stars 

    19 Jul 2010 | | Contributor(s):: Krishna Shenai

    This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging silicon and wide bandgap materials and power devices, heterogeneous chip-scale power integration,...

  6. Transistors!

    out of 5 stars 

    04 Mar 2024 | | Contributor(s):: Mark Lundstrom

    As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes...

  7. Tunnel FETs - Device Physics and Realizations

    out of 5 stars 

    27 Jun 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  8. Tutorial for PADRE Based Simulation Tools

    out of 5 stars 

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

  9. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    out of 5 stars 

    27 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

  10. Ubuntu based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...

  11. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

  12. Windows based Interactive tool for the simulation of the MOS electrostatics

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...

  13. Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes

    26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo

    This is a tool to simulate the MOS electrostatics. It includes the simulation of  2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...