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Modified Virtual-Source Model for Degraded Short Channel MOSFET
Downloads | 28 Oct 2024 | Contributor(s):: Qu Junru
Modified the MVS Nanotransistor Model (Silicon) 1.1.1 model published by MIT to add parameter degradation predictions for devices after hot-carrier stress, making it applicable to degraded short-channel MOSFETs.
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Essential Physics of the Ultimate MOSFET and the Next 20 Years of Semiconductor Technology
Online Presentations | 18 Mar 2024 | Contributor(s):: Mark Lundstrom
My goal in this talk is to discuss the operation of these devices in a simple but physically sound way. A broader goal of my talk is to discuss how semiconductor technology will meet the insatiable appetite that artificial intelligence has for more computing, more memory, and faster communication.
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Transistors!
Papers | 04 Mar 2024 | Contributor(s):: Mark Lundstrom
As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes...
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ABACUS Tool Suite (Fall 2023)
Series | 19 Oct 2023 | Contributor(s):: Gerhard Klimeck
The objective of the recitation series is to enable faculty to enhance existing or new semiconductor classes with interactive simulations.
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ABACUS Tool Suite and Bipolar Junction Transistors (Fall 2023)
Online Presentations | 18 Oct 2023 | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries.
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ECE 606: Solid State Devices I
Courses | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
This course provides the graduate-level introduction to understand, analyze, characterize and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.The material will primarily appeal to electrical engineering students whose...
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Fractionalization of Charge and Statistics in Two Dimensions
Online Presentations | 14 Dec 2022 | Contributor(s):: Michael J. Manfra
This lecture will focus on the development of experiments that allow the first direct observation of anyonic braiding statistics in the fractional quantum Hall regime. The connection between development of new theoretical concepts and the behavior of a humble transistor will be emphasized.
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ABACUS Bipolar Junction Transistors (Spring 2022)
Online Presentations | 08 Jun 2022 | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries....
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Fundamentals of Nanotransistors
Papers | 30 Jan 2022 | Contributor(s):: Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
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ABACUS Bipolar Junction Transistors (Winter 2021)
Online Presentations | 25 Jan 2022 | Contributor(s):: Gerhard Klimeck
In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles,...
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What's the mobility?
Downloads | 08 Sep 2021 | Contributor(s):: Eric Pop
This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...
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IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys
Online Presentations | 25 Jul 2021 | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth
In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.
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IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations
Online Presentations | 15 Jul 2021 | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis
The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....
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Recursive algorithm for NEGF in Python GPU version
Downloads | 02 Feb 2021 | Contributor(s):: Ning Yang, Tong Wu, Jing Guo
This folder contains two Python functions for GPU-accelerated simulation, which implements the recursive algorithm in the non-equilibrium Green’s function (NEGF) formalism. Compared to the matlab implementation [1], the GPU version allows massive parallel running over many cores on GPU...
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25 Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz
Online Presentations | 21 Sep 2020 | Contributor(s):: Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi Dayeh
The concept of an intrinsically synthesizable linear device is demonstrated. It was implemented by changing only the device layout; additional performance gains can be attained by further materials engineering.
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Moore’s Law Extension and Beyond
Online Presentations | 19 Nov 2018 | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
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A Short Overview of the NEEDS Initiative
Online Presentations | 06 Jun 2016 | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
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Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
Online Presentations | 25 Nov 2015 | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
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Inter-band Tunnel Transistors: Opportunities and Challenges
Online Presentations | 30 Oct 2015 | Contributor(s):: Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
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Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?
Online Presentations | 30 Oct 2015 | Contributor(s):: Suman Datta
In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.