Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...

    https://nanohub.org/wiki/EduSemiconductor

  2. Rishabh Singhal

    https://nanohub.org/members/200649

  3. Sofia Cunha

    https://nanohub.org/members/195711

  4. SIDDHARTH KRISHNAN

    https://nanohub.org/members/190793

  5. Abdul Hamid Bin Yousuf

    https://nanohub.org/members/187936

  6. Srinivas Varma Pericherla

    https://nanohub.org/members/186462

  7. Adrian Suteu

    Source Graphene is the first based Romanian company focused on producing and supplying graphene oxide in water dispersion. Source Graphene has the capacity to obtain high, cost effective amounts of...

    https://nanohub.org/members/175145

  8. Ahmed M Abdelgawad

    https://nanohub.org/members/169075

  9. Amogh Vithalkar

    https://nanohub.org/members/168737

  10. Al-Amin Sheikh

    https://nanohub.org/members/160887

  11. Akhil Devdas Prabhu

    https://nanohub.org/members/160853

  12. Chowdhury, Prodipto

    https://nanohub.org/members/152180

  13. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | | Contributor(s):: Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

  14. Smt. A. Naga Malli

    Assistant Professor, Dept of ECE, Gayatri Vidya Parishad college of Engineeering(A)

    https://nanohub.org/members/146115

  15. George James.T (Dr.)

    https://nanohub.org/members/138016

  16. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

  17. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

  18. Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

  19. Sunjeet Jena

    https://nanohub.org/members/130889

  20. The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors

    04 Oct 2015 | | Contributor(s):: Shaloo Rakheja

    In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...