Animations (1-8 of 8)

1. Electron Density in a Nanowire

   Animations | 30 Jan 2011 | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

   Electron Density in a circular Silicon nanowire transistor.

2. MOSFet Demonstration: MOSFET Device Simulation and Analysis

   Animations | 11 Jun 2009 | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

   This video shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated.

3. OMEN Nanowire Demonstration: Nanowire Simulation and Analysis

   Animations | 11 Jun 2009 | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

   This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.

4. Quantum Dot Wave Function (Quantum Dot Lab)

   Animations | 02 Feb 2011 | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

   Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

5. Quantum Dot Wave Function (still image)

   Animations | 31 Jan 2011 | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

   Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

6. Self-Assembled Quantum Dot Structure (pyramid)

   Animations | 02 Feb 2011 | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

   Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

7. Self-Assembled Quantum Dot Wave Structure

   Animations | 31 Jan 2011 | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

   A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

8. Tunneling in an Nanometer-Scaled Transistor

   Animations | 25 Jan 2011 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

   Electrons tunneling through the gate of an ultra-scaled transistor.