How to Submit Teaching Materials: A Quick Tutorial
14 Feb 2022 | | Contributor(s):: Joseph M. Cychosz
This short tutorial demonstrates how to upload (contribute) teaching materials on nanoHUB.
MATE 370 Virtual Lab: Exploring Nucleation, Crystallization, and Growth through nanoHUB Virtual Kinetics Tools
24 Sep 2020 | | Contributor(s):: Mohsen B Kivy, Crystal Ipong
This lab explores the kinetics of nucleation, crystallization, and growth processes using nanoHUB tools.
MATE 370 Virtual Lab: Exploring Phase Transformations Through nanoHUB Nanomaterial Mechanics Explorer Tool
This lab explores the kinetics of phase transformation using nanoHUB tools.
MATE 370 Virtual Lab: Exploring Diffusion through nanoHUB Defect- coupled and Concentration-dependent Diffusion Tools
This lab explores the kinetics of solid-state diffusion using nanoHUB tools.
Computational Labs in Kinetics of Materials and Process Design (California Polytechnic State University)
07 Sep 2020 | | Contributor(s):: Mohsen B Kivy, Crystal Ipong
Kinetics of Materials and Process Design (MATE 370) is a 4-unit major course for junior-year undergraduate students of the Materials Engineering Department, Cal Poly State University. The Materials Engineering Department endorses the applications of theory to practice through its...
Ranjit A. Patil
How to View (100), (110) and (111) Planes in Silicon Using Crystal Viewer 3.0
24 Mar 2017 | | Contributor(s):: Tanya Faltens
This is a step-by-step guide that describes how to draw planes through a structure, and then view the structure, cut by the planes.This exercise may be helpful to understand the different symmetries observed on different planes in Si, and the different oxidation rates for different faces.
Learning Module: Chemical Lab Safety Rules
28 Apr 2016 | | Contributor(s):: SCME NM
The fabrication of micro and nano devices requires the use of several types of chemicals, both inert and hazardous. This learning module provides the general safety rules for working in facilities and laboratories that use chemicals. Through its activities, the learning module gives...
Learning Module: Deposition Processes Overview for Microsystems
28 Apr 2016 | | Contributor(s):: Support Center for Microsystems Education (SCME), MJ Willis
This learning module is an overview of the common deposition processes used for the fabrication of micro-size devices. This learning module discusses thermal oxidation, chemical deposition and physical deposition processes. Activities are provided for further exploration into these...
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
Exploring Materials Properties with Nanomaterial Mechanics Explorer Structure Files
24 Mar 2016 | | Contributor(s):: Tanya Faltens
This document describes how to generate and download simulation output files from the Nanomaterial Mechanics Explorer on nanoHUB and view them locally using OVITO. This can be particularly useful for more advanced manipulations of the trajectory files, and for sharing files with others, such...
OOMMF FTUG: Object Oriented MicroMagnetic Framework First Time User's Guide
*** This OOMMF FTUG updated on 5/25/2020 to include information about the newly included text editor and accessing files using sftp *** OOMMF is the Object Oriented MicroMagnetic Framework, which is a powerful research-grade simulation tool for modeling the response of materials to applied...
Framework for Evaluating Simulations: Analysis of Student Developed Interactive Computer Tool
25 Jun 2015 | | Contributor(s):: Kelsey Joy Rodgers, Heidi A Diefes-Dux, Yi Kong, Krishna Madhavan
This is the presentation for a paper presented at the 2015 annual American Society of Engineering Education (ASEE) conference. The paper discusses a developed framework for evaluating and scaffolding student-developed simulations in an open-ended learning environment. The full paper...
Exploration of the Oxidation Rate of Silicon Wafers via Simulation
04 Nov 2014 | | Contributor(s):: Tanya Faltens
This teaching resource is designed for instructors who would like to introduce exploration through simulation into their lessons on silicon oxidation. Step-by-step instructions are provided for running the process lab oxidation simulation, and guiding questions are provided that should help...
Exploring Thin Film Interference Colors through Simulation
This resource will guide instructors and independent learners through the process of simulating the reflections off of a thin film using the S4: Stanford Stratified Structure Solver simulation tool. Examples of a freely standing thin film (a soap bubble) and a thin film of silicon dioxide...
04 Oct 2013 | | Contributor(s):: Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
NCN Education Team: Student Research
08 Apr 2014 | | Contributor(s):: Kelsey Joy Rodgers, Oguz Hanoglu, Yi Kong
Using nanoHUB to Introduce Elementary and Middle School Students to Models and Simulations
24 Mar 2014 | | Contributor(s):: Tanya Faltens
This is a combination hands-on and simulation activity that will teach middle school students about the function and importance of modeling and simulations in science and engineering while learning about three important carbon nanostructures: graphene, bucky balls, and carbon nanotubes. The...
Mar 20 2014
Cloud-based, fully interactive simulations via nanoHUB to enhance student learning of materials engineering concepts
Evaluating the Fermi Function at Ec
05 May 2012 | | Contributor(s):: Tanya Faltens
Short narrated instruction giving step-by-step instructions for evaluating f(E) at Ec. The general method is explained,and a value is calculated for the specific case of Si at 300K.