EE 3329 – Electronic Devices Syllabus (“Extended Play”)
The University of Texas at El Paso
The following concepts can be part of the syllabus for the Electronic Devices (EE 3329) course. Note that the list of topics cannot be covered in a semester, it is up to the individual instructors to choose what concepts they wish to cover.
I. Introduction to Quantum Mechanics
* Principles of Quantum Mechanics
- Energy Quanta
- Wave-Particle Duality
- The Uncertainty Principle
* Schrödinger’s Wave Equation
- The Wave Equation
- Physical Meaning of the Wave Function
- Boundary Conditions
* Applications of Schrödinger’s Wave Equation
- Electron in Free Space
- The Infinite Potential Well
- The Step Potential Function
- The Potential Barrier
II. Introduction to the Quantum Theory of Solids
* Allowed and Forbidden Energy Bands
- Formation of Energy Bands
- The Kronig-Penney Model
- The k-Space Diagram
* Electrical Conduction in Solids
- The Energy Band and the Bond Model
- Drift Current
- Electron Effective Mass
- Concept of the Hole
- Metals, Insulators, and Semiconductors
III. Metal-Semiconductor and Semiconductor Heterojunctions
* Heterojunctions
- Heterojunction Materials
- Energy-Band Diagrams
- Two-Dimensional Electron Gas
- Equilibrium Electrostatics
- Current-Voltage Characteristics
IV. Semiconductors: A General Introduction
* General Material Properties
- Composition
- Purity
- Structure
- The Unit Cell Concept
- Simple 3-D Unit Cells
- Semiconductor Lattices
- Miller Indices
* Crystal Growth
- Obtaining Ultrapure Si
- Single-Crystal Formation
* Summary
V. Carrier Modeling
* Semiconductor Models
* Carrier Properties
- Charge
- Effective Mass
- Carrier Numbers in Intrinsic Material
- Manipulation of Carrier Numbers – Doping
- Carrier-Related Terminology
* State and Carrier Distributions
- Density of States
- The Fermi Function
- Equilibrium Distribution of Carriers
* Equilibrium Carrier Concentrations
- Formulas for n and p
- Alternative Expressions for n and p
- ni and np Product
- Charge Neutrality Relationship
- Carrier Concentration Calculations
- Determination of EF
- Carrier Concentration Temperature Dependence
VI. Carrier Action
* Drift
- Definition – Visualization
- Drift Current
- Mobility and Scattering
- Resistivity
- Band Bending
- Definition – Visualization
- Hot-Point Probe Measurement
- Diffusion and Total Currents
Diffusion Currents
Total Currents - Relating Diffusion Coefficients/Mobilities
Constancy of the Fermi Leve
Current Flow Under Equilibrium Conditions
Einstein Relationship
- Definition – Visualization
Band-to-Band Recombination
R-G Center Recombination
Auger Recombination
Generation Process
* Equations of State
- Continuity Equations
- Minority Carrier Diffusion Equations
- Simplifications and Solutions
- Problem Solving
Sample Problem No. 1
Sample Problem No. 2
* Supplemental Concepts
VII. pn Junction Electrostatics
* Quantitative Electrostatic Relationships
- Assumptions/Definitions
- Step Junction with VA = 0
Solution for p
Solution for E
Solution for V
Solution for xn and xp - Step Junction with VA ≠ 0
- Examination/Extrapolation of Results
- Linearly Graded Junctions
VIII. pn Junction Diode: I-V Characteristics
- Qualitative Derivation
- Quantitative Solution Strategy
General Considerations
Quasineutral Regional Considerations
Depletion Region Considerations
Boundary Conditions
“Game Plan” Summary
* Derivation from the Ideal
- Ideal Theory Versus Experiment
- Reverse-Bias Breakdown
Avalanching
Zener Process - The R-G Current
- VA -> Vbi High-Current Phenomena
Series Resistance
High-Level Injection
IX. BJT Fundamentals
* Electrostatics
* Introductory Operational Considerations
* Performance Parameters
- Emitter Efficiency
- Base Transport Factor
- Common Base d.c. Current Gain
- Common Emitter d.c. Current Gain
X. BJT Static Characteristics
* Ideal Transistor analysis
- Solution Strategy
Basic Assumptions
Notation
Diffusion Equations/Boundary Conditions
Computational Relationships - General Solution (W Arbitrary)
Emitter/Collector Region Solutions
Base Region Solution
Performance Parameters/Terminal Currents - Simplified Relationships
ΔpB(x) in the Base
Performance Parameters - Ebers – Moll Equations and Model
* Deviations from the Ideal
- Ideal Theory/Experiment Comparison
- Base Width Modulation
- Punch-Through
- Avalanche Multiplication and Breakdown
Common Base
Common Emitter - Geometrical effects
Emitter Area ≠ Collector Area
Series Resistances
Current Crowding - Recombination – Generation Current
- Graded Base
- Figure of Merit
XI. MOS Fundamentals
* Ideal Structure Definition
* Electrostatics – Mostly Qualitative
- Visualization Aids
Energy Band Diagram
Block Charge Diagrams - Effect of an Applied Bias
General Observations
Specific Biasing Regions
* Electrostatics – Quantitative Formulation
- Semiconductor Electrostatics
Preparatory Considerations
Delta-Depletion Solution - Gate Voltage Relationship
* Capacitance – Voltage Characteristics
- Theory and Analysis
Qualitative Theory
Delta – Depletion Analysis - Computations and Observations
Exact Computations
Practical Observations
XII. MOSFETs – The Essentials
* Qualitative Theory of Operation
* Quantitative ID – VD Relationships
- Preliminary Considerations
Threshold Voltage
Effective Mobility - Square-Law Theory
- Bulk-Charge Theory
- Charge-Sheet and Exact-Charge Theories
XIII. Nonideal MOS
* Metal-Semiconductor Workfunction Difference
* Oxide Charges
- General Information
- Mobile Ions
- The Fixed Charge
- Interfacial Traps
- Induced Charges
Radiation Effects
Negative-Bias Instability - ΔVG Summary
* MOSFET Threshold Considerations
- VT Relationships
- Threshold, Terminology, and Technology
- Threshold Adjustment
- Back Biasing
- Threshold Summary