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ECE 659 Lecture 3: The Quantum of Conductance
Online Presentations | 17 Jan 2003 | Contributor(s):: Supriyo Datta
Reference Chapter 1.3
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Exploring New Channel Materials for Nanoscale CMOS
Papers | 21 May 2006 | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics,...
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Device Physics and Simulation of Silicon Nanowire Transistors
Papers | 20 May 2006 | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
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Nanowire
Tools | 19 May 2006 | Contributor(s):: Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution
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NanoMOS
Tools | 19 May 2006 | Contributor(s):: , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
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Band Structure Lab
Tools | 19 May 2006 | Contributor(s):: Samik Mukherjee, Kai Miao, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, James Fonseca, Hesameddin Ilatikhameneh, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck
Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires
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ECE 659 Lecture 1: Energy Level Diagram
Online Presentations | 16 May 2006 | Contributor(s):: Supriyo Datta
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Switching Energy in CMOS Logic: How far are we from physical limit?
Online Presentations | 24 Apr 2006 | Contributor(s):: Saibal Mukhopadhyay
Aggressive scaling of CMOS devices in technology generation has resulted in exponential growth in device performance, integration density and computing power. However, the power dissipated by a silicon chip is also increasing in every generation and emerging as a major bottleneck to technology...
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Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
Online Presentations | 20 Apr 2006 | Contributor(s):: Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.
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Nanofabrication
Online Presentations | 11 Apr 2006 | Contributor(s):: R. Fabian Pease
Nanotechnology comprises the techniques for making things small (<100 nm) — i.e., nanopatterning — and the resulting applications, ranging from the results of undirected nanopatterning such as Goretex, paint, and reactive gold nanoparticles, to those of directed nanopatterning such as...
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MOSCap
Tools | 06 Apr 2006 | Contributor(s):: Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
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Modeling Single and Dual-Gate Capacitors using SCHRED
Series | 31 Mar 2006 | Contributor(s):: Dragica Vasileska
SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge description,...
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MOSFet
Tools | 30 Mar 2006 | Contributor(s):: Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
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Metal Oxide Nanowires: Synthesis, Characterization and Device Applications
Online Presentations | 07 Mar 2006 | Contributor(s):: Jia Grace Lu
Various metal oxide nanowires, such as ZnO, SnO2, Fe2O3, In2O3 and Ga2O3, have been synthesized by chemical vapor deposition method. Their structures and properties are characterized by TEM, SEM, XRD, AFM, photoluminescence, photoconductance, scanning surface potential microscopy, and electrical...
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QC-Lab
Tools | 14 Feb 2006 | Contributor(s):: Baudilio Tejerina
Quantum Chemsitry Lab: Ab Initio and DFT molecular and electronic structure calculations of small molecules
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Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
Online Presentations | 13 Feb 2006 | Contributor(s):: Mark Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...
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Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)
Online Presentations | 13 Feb 2006 | Contributor(s):: peide ye
Atomic layer deposition (ALD) is an emerging nanotechnology enables the deposit of ultrathin films, one atomic layer by one atomic layer. ALD provides a powerful, new capability to grow or regrow nanoscale ultrathin films of metals, semiconductors and insulators. This presentation introduces ALD...
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Schred
Tools | 30 Mar 2006 | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
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Quantum-dot Cellular Automata (QCA) - Memory Cells
Animations | 03 Feb 2006 | Contributor(s):: John C. Bean
Scientists and engineers are looking for completely different ways of storing and analyzing information. Quantum-dot Cellular Automata are one possible solution. In computers of the future, transistors may be replaced by assemblies of quantum dots called Quantum-dot Cellular Automata (QCAs).This...
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Quantum-dot Cellular Automata (QCA) - Logic Gates
Animations | 03 Feb 2006 | Contributor(s):: John C. Bean
An earlier animation described how "Quantum-dot Cellular Automata" (QCAs) could serve as memory cells and wires. This animation contnues the story by describing how QCAs can be made into MAJORITY, OR, AND, and INVERTER logic gates.