Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0
A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
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Version 1.0.0 - published on 07 Apr 2016 doi:10.4231/D30C4SM1H - cite this
Licensed under NEEDS Modified CMC License according to these terms
Description
An accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature.
Model Release Components ( Show bundle contents ) Bundle
- Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Verilog-A(ZIP | 8 KB)
- Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Benchmarks(ZIP | 398 KB)
- Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Parameters(ZIP | 1 KB)
- Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Experimental Data(ZIP | 56 KB)
- Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Manual(PDF | 891 KB)
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Key References
[1] J.D. Aguirre Morales, S. Frégonèse, C. Mukherjee, C. Maneux, and T. Zimmer, "An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs", IEEE Trans. Electron Devices, vol. 62, no. 12, pp. 4333-4339, Dec. 2015.
[2] C. Mukherjee, J.-D. Aguirre-Morales, S. Frégonèse, T. Zimmer, and C. Maneux, “Versatile compact model for graphene FET targeting reliability-aware circuit design,” IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 757–763, Mar. 2015.
[3] S. Frégonèse, M. Magallo, C. Maneux, H. Happy, and T. Zimmer, “Scalable electrical compact modeling for graphene FET transistors,” IEEE Trans. Nanotechnol., vol. 12, no. 4, pp. 539–546, Jul. 2013.
Cite this work
Researchers should cite this work as follows:
- Aguirre Morales, J.; Frégonèse, S.; Mukherjee, C.; Maneux, C.; Zimmer, T. (2016). Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs. nanoHUB. doi:10.4231/D30C4SM1H