Released Resonant Body Transistor (RBT) Model 1.0.0

By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1

Massachusetts Institute of Technology (MIT)

An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D3KS6J55W - cite this

Licensed under NEEDS Modified CMC License according to these terms

Description

An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The electrostatic drive of RBTs using internal dielectric transduction, along with the FET sensing, enable these devices to easily scale to multi-GHz frequencies. Together with the potential for monolithic CMOS integration, they represent a potential candidate for uncountable timing and RF applications that continuously drive the technology towards minimization of size, weight and power. This compact model is developed with the aim to capture the diverse and highly entangled physics intrinsic to the original RBT. The model is aimed to present a deep insight into the physics of the RBT while emphasizing the effect of the different parameters on the device performance. It is also intended to grant circuit designers and system architects the ability to quickly assess the performance of prospective RBTs, while minimizing the need for computationally intensive finite element method (FEM) simulations.

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Key References

[1] D. Weinstein and S. A. Bhave, “The Resonant Body Transistor,” Nano Letters, vol. 10, no. 4, pp. 1234–1237, 2010.

[2] R. Marathe, B. Bahr, W. Wang, Z. Mahmood, L. Daniel, and D. Weinstein, “Resonant Body Transistors in IBM’s 32 nm SOI CMOS Technology,” J. Microelectromech. Syst., no. 99, pp. 1–1, 2013.

[3] D. Weinstein and S. Bhave, “Internal dielectric transduction in bulk-mode resonators,” Microelectromechanical Systems, Journal of, vol. 18, no. 6, pp. 1401– 1408, Dec 2009.

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[13] BSIM Technical Manual. [Online]. Available: http://www-device.eecs. berkeley.edu/bsim/Files/BSIM6/BSIM6.1.0/BSIM6.1.0_Technical_Note.pdf

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