MIT TFET compact model including the impacts of non-idealities 1.0.0
We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.
Listed in Compact Models
Additional materials available
Version 1.0.0 - published on 07 May 2017 doi:10.4231/D3XW47X6W - cite this
Licensed under NEEDS Modified CMC License according to these terms
Description
We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface Trap Assisted Tunneling (TAT) and intrinsic band steepness. The model matches several recent experiments on TFETs, provides a conceptual understanding of carrier transport in TFET and a guideline (e.g. requirements for material and device parameters) for achieving steep sub-threshold swing.
Model Release Components ( Show bundle contents ) Bundle
MIT TFET compact model including the impacts of non-idealities 1.0.0 Verilog-A(ZIP | 7 KB)- MIT TFET compact model including the impacts of non-idealities 1.0.0 Benchmarks(ZIP | 87 MB)
MIT TFET compact model including the impacts of non-idealities 1.0.0 Parameters(PDF | 126 KB)- MIT TFET compact model including the impacts of non-idealities 1.0.0 Experimental Data(ZIP | 1 KB)
- MIT TFET compact model including the impacts of non-idealities 1.0.0 Manual(PDF | 2 MB)
LICENSE.txt(TXT | 2 KB)- README.txt(TXT | 3 KB)
- License terms
Cite this work
Researchers should cite this work as follows:
- Sajjad, R. N.; Radhakrishna, U.; Antoniadis, D. (2017). MIT TFET compact model including the impacts of non-idealities. nanoHUB. doi:10.4231/D3XW47X6W