Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 14 Aug 2018 doi:10.4231/D3F18SH56 - cite this
Licensed under NEEDS Modified CMC License according to these terms
Versions
Version | Released | DOI Handle | Status | |
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1.0.0 | Aug 11, 2018 | 10.4231/D3F18SH56 | published | view version » |
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.