Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0

By Saurabh Vinayak Suryavanshi1, Eric Pop1

Stanford University

The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.0 - published on 14 Aug 2018 doi:10.4231/D3F18SH56 - cite this

Licensed under NEEDS Modified CMC License according to these terms



Stanford 2D semiconductor quasi-ballistic (S2DSb) transistor model is a physics-based compact model for quasi-ballistic 2D field-effect transistors (FETs). The model implementation is based on the MIT virtual source model. In addition to the quasi-ballistic transport, we also include a self-consistent model for device self-heating that appropriately captures the device temperature. 2D FETs, which can be considered as an extreme of silicon-on-insulator technology with an extremely thin (sub-nm) body, have a large thermal resistance and the device self-heating plays a significant role in the carrier transport. Both the quasi-ballistic transport and the device self-heating models are verified independently by experiments. We also provide a set of parameters based on calibration to 10 nm channel single-layer n-type MoS2 FET. 

Model Release Components

Cite this work

Researchers should cite this work as follows: