WHiTe Compact Models 2.3.2

This package provides a set of 4H SiC (silicon carbide) high-temperature integrated device compact models, written in industry standard Verilog-A; currently included are a resistor and a JFET (junction field-effect transistor).

Listed in Compact Models

Additional materials available

Version 2.3.2 - published on 24 Mar 2023 doi:10.21981/6XDQ-E773 - cite this

Licensed under NEEDS Modified CMC License according to these terms

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The WHiTe (Wood High-Temperature) JFET (junction field-effect transistor) compact model has been developed to aid in the design of 4H SiC (silicon carbide) ICs (integrated circuits) for hostile environments. Key features include:

  • bilateral channel modulation by independent dissimilar gates;
  • field-dependent channel mobility;
  • voltage-dependent output conductance in channel saturation;
  • an extensive operating temperature range;
  • innate support for extrinsic channel series resistance; and
  • an intuitive and coherent set of physical and empirical parameters.

A process-compatible resistor compact model has been concurrently developed.

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NEW ENERGY_ABSTOL build option
FIX intrinsic output conductance output variable GOI calculation in reverse mode operation
FIX intrinsic body mutual conductance output variable GMBI calculation in reverse mode operation
FIX intrinsic gate mutual conductance output variable GGBI calculation in reverse mode operation for JFET
CHANGE ENERGY_RELTOL build option status to obsolete
CHANGE numerical electrochemical potential criteria to absolute tolerance
CHANGE warning message when first temperature exponent of MU parameter MTE1 or second temperature exponent of MU0 parameter MTE2 have equal polarity
CHANGE usage of system tasks for error and warning messages
CHANGE units strings to use ASCII characters only