a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node
This work presents an analytical current–voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The model is derived from the fundamentals considering the physics of 2D TMD crystals, and covers all regions of the FET operation (linear, saturation, and subthreshold) under a continuous function. Moreover, three issues of great importance in the emerging 2D FET arena: interface traps, mobility degradation, and inefficient doping have been carefully considered. The compact models are verified against 2-D device simulations as well as experimental results for state-of-the-art top-gated monolayer TMD FETs, and can be easily employed for efficient exploration of circuits based on 2D FETs as well as for evaluation and optimization of 2D TMD-channel FET design and performance.
Model Release Components ( Show bundle contents ) Bundle
- UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Verilog-A(VA | 17 KB)
- UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Benchmarks(ZIP | 172 KB)
- UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Parameters(TXT | 54 B )
- UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Experimental Data(XLSX | 15 KB)
- UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0 Manual(PDF | 1 MB)
- W.Cao_ 2D TMD FET model.pdf(PDF | 2 MB)
- License terms
W. Cao, J. Kang, W. Liu and K. Banerjee, “A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect,” IEEE Transactions on Electron Devices, vol. 61, no. 12, pp. 4282-4290, 2014.
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Cite this work
Researchers should cite this work as follows:
- Cao, W., Banerjee, K. (2015). UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model. nanoHUB. doi:10.4231/D37940V7H
NEEDS: Nano-Engineered Electronic Device Simulation Node
This publication belongs to the NEEDS: Nano-Engineered Electronic Device Simulation Node group.