UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0

By Wei Cao1, Kaustav Banerjee2

1. University of California Santa Barbara 2. University of California, Santa Barbara

a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

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Version 1.0.0 - published on 25 Mar 2015 doi:10.4231/D37940V7H - cite this

Licensed under NEEDS Modified CMC License according to these terms

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Description

 

This work presents an analytical current–voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The model is derived from the fundamentals considering the physics of 2D TMD crystals, and covers all regions of the FET operation (linear, saturation, and subthreshold) under a continuous function. Moreover, three issues of great importance in the emerging 2D FET arena: interface traps, mobility degradation, and inefficient doping have been carefully considered. The compact models are verified against 2-D device simulations as well as experimental results for state-of-the-art top-gated monolayer TMD FETs, and can be easily employed for efficient exploration of circuits based on 2D FETs as well as for evaluation and optimization of 2D TMD-channel FET design and performance.
 

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Key References

W. Cao, J. Kang, W. Liu and K. Banerjee, “A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect,” IEEE Transactions on Electron Devices, vol. 61, no. 12, pp. 4282-4290, 2014.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nature Nanotechnology., vol. 6, pp. 147–150, Jan. 2011.

H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and A. Javey, “High-performance single layered WSe2 p-FETs with chemically doped contacts,” Nano Lett., vol. 12, no. 7, pp. 3788–3792, Jun. 2012.

W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena, and K. Banerjee,“Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors,” Nano Lett., vol. 13, no. 5, pp. 1983–1990, Mar. 2013.

Jooyoung Song, Bo Yu, Yu Yuan, and Yuan Taur, “A Review on Compact Modeling of Multiple-Gate MOSFETs,” IEEE Transactions on Circuits and Systems, vol. 56, no. 8, Aug. 2009.

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Tags

  1. 2D FET
  2. Compact Model
  3. Interface Traps
  4. mobility degradation
  5. series resistance

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