How to Write, Develop and Implement a Real Compact Model
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Abstract
Compact models must get the physics right, work reliably over bias, geometry, and temperature, interact properly with the circuit simulators in which they are implemented, run efficiently, and follow impeccable software development practices. This workshop will be a detailed deep-dive into an industrial strength Verilog-A code for the R3 model for JFETs, diffused resistors, and polysilicon resistors. Do not think that a “resistor” is a trivially simple device to model: real resistors are affected by depletion pinching, velocity saturation, and self-heating, and to properly account for all of these effects, while ensuring no unphysical model behavior, is not trivial. But it is not as complex as a complete MOS or bipolar transistor model – so is ideal as a training vehicle for compact modeling.
The R3 compact model used in this workshop is published here under the list of NEEDS Compact Models.
For more information on this workshop see NEEDS Group page
Bio
Dr. Colin McAndrew has been involved in compact modeling of bipolar, MOS, and passive devices for more than 25 years. He received the Ph.D. degree in Systems Design Engineering from the University of Waterloo, Ontario, Canada, in 1984. From 1987 to 1995 he was at AT&T Bell Laboratories, Allentown, PA, and since 1995 he has been with Freescale Semiconductor (formerly Motorola Semiconductor Products Sector), Tempe, AZ, where he is at present a Fellow of Technical Staff. Dr. McAndrew is a Fellow of the IEEE and has served as an Editor of the IEEE Transactions on Electron Devices and on numerous technical program committees. He is co-author of the recently published book, Operation and Modeling of the MOS Transistor, Oxford Univ. Press, 2010.
Sponsored by
NEEDS: Nano-Engineered Electronic Device Simulation Node is a resource for nanoelectronics supported by the National Science Foundation and the Semiconductor Research Corporation.
References
G. J. Coram, How to (and how not to) write a compact model in Verilog-A, Proc. IEEE BMAS, pp. 97-106 2004.
G. J. Coram, Writing Your First Verilog-A Compact Model, 2014, http://nanohub.org/resources/20579.
Colin C. McAndrew, and Tamara Bettinger, Robust Parameter Extraction for the R3 Nonlinear Resistor Model for Diffused and Poly Resistors, IEEE Trans. on Semiconductor Manufacturing, vol. 25, pp. 555-563, 2012.
Colin McAndrew, Integrated Resistor Modeling, Chapter 9 in Compact Modeling: Principles, Techniques, and Applications, Ed. By Gennady Gildenblat, Springer, 2010.
Colin McAndrew, R3 Nonlinear Resistor Model, 2014, nanoHUB doi:10.4231/D3QB9V64G
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103 Dicovery Learning Center, Purdue University, West Lafayette, IN
NEEDS: New Era Electronic Devices and Systems
This resource belongs to the NEEDS: New Era Electronic Devices and Systems group.