ME 290R Lecture 2.2: Lithography Performance Criteria - Technical (Yield Modeling)

By Taylor, Hayden

Mechanical Engineering, University of California at Berkeley, Berkeley, CA

Published on

Abstract

Ways to evaluate a lithography process. Topics include: resolution; line edge roughness; overlay capability; throughput; cost of ownership; capital cost; energy consumption and environmental impact (e.g. solvent usage; material wastage); pattern dependencies.

Cite this work

Researchers should cite this work as follows:

  • Taylor, Hayden (2019), "ME 290R Lecture 2.2: Lithography Performance Criteria - Technical (Yield Modeling)," https://nanohub.org/resources/30205.

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ME 290R Lecture 2.2: Lithography Performance Criteria - Technical (Yield Modeling)
  • Lecture 2.2 Lithography Performance Criteria 1. Lecture 2.2 Lithography Perfor… 0
    00:00/00:00
  • What factors need to be borne in mind 2. What factors need to be borne … 48.915582248915584
    00:00/00:00
  • Yield Modeling 3. Yield Modeling 55.155155155155157
    00:00/00:00
  • Critical area 4. Critical area 687.2205538872206
    00:00/00:00
  • Yield modeling continued 5. Yield modeling continued 1205.6723390056725
    00:00/00:00
  • How can we characterize manufactured patterns? 6. How can we characterize manufa… 1614.2809476142811
    00:00/00:00
  • Scanning electron microscopy: CDSEM 7. Scanning electron microscopy: … 1674.7080413747081
    00:00/00:00
  • CD SEM - working principloe 8. CD SEM - working principloe 1743.4100767434102
    00:00/00:00
  • Atomic force microscopy 9. Atomic force microscopy 1752.218885552219
    00:00/00:00
  • Scatterometry 10. Scatterometry 1951.3513513513515
    00:00/00:00
  • Electrical/functional test structures 11. Electrical/functional test str… 2223.1564898231568
    00:00/00:00