Drift-Diffusion Lab

Simulate single semiconductor characteristics

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.8
Published on 04 Aug 2009, unpublished on 13 Aug 2009 All versions

doi:10.4231/D3C53F13P cite this

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Abstract

This tool enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.
    Improvements / modifications in subsequent version releases:
  • 1.8 - Fixed potential plot for 'Bias only' case to show zero slope at equilibrium. Fixed recombination rate plot - It now reads 'Net Recombination' (+ve values mean net recombination & -ve values mean net generation in the bar).
  • 1.7 - Meshing made robust to treat different examples.
  • 1.6 - Added option for solution of Electrons and Holes simultaneously (Ambipolar), Electron only & Hole only contunuity equations. Fixed for improved meshing.
  • 1.5 - Updated to include carrier mobility in the input deck. Fixed for Absorption length for light shine experiments. Corrected for carrier concentration near edges with No Surface recombination at both ends.
  • 1.4 - Included status bar for running simulations.
  • 1.32 - Changed penetration depth for light shine at the edge. Thin penetration is allowed now.
  • 1.131 - Fixed for minor error in meshing. Accurate definition of mesh with light shine option.
  • 1.13 - Fixed for error in Surface Recombination Velocity (cm/s) at the contacts and added another tab to for it. Recombination velocity can now be defined for electrons and holes and at both contacts separately.
  • 1.11 - Added Surface Recombination Velocity (cm/s) in input deck .
  • 1.1 - Updated for GUI. Carrier Generation Rate (/cm2/s) with light shine is user defined. Added Current density in output plot J(x)
  • 1.0 - 1D linear Drift-Diffusion simulator launched.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

Sponsored by

NCN@Purdue

Cite this work

Researchers should cite this work as follows:

  • Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Gloria Wahyu Budiman (2021), "Drift-Diffusion Lab," https://nanohub.org/resources/semi. (DOI: 10.4231/D3C53F13P).

    BibTex | EndNote

Tags

  1. diffusion
  2. drift
  3. drift-diffusion
  4. Drift-Diffusion Lab
  5. excess carriers
  6. nanoelectronics
  7. NCN@Purdue Supported
  8. Padre
  9. transient