Exercise for MOSFET Lab: DIBL Effect

By Dragica Vasileska1; Gerhard Klimeck2

1. Arizona State University 2. Purdue University

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Abstract

In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

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Researchers should cite this work as follows:

  • Dragica Vasileska, Gerhard Klimeck (2009), "Exercise for MOSFET Lab: DIBL Effect," https://nanohub.org/resources/7190.

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Tags

  1. MOSFET
  2. MOSFET modeling
  3. nanoelectronics