
Thermoelectric effects in semiconductor nanostructures: Role of electron and lattice properties
06 Oct 2010  Contributor(s):: Abhijeet Paul, Gerhard Klimeck
This presentation covers some aspects of present development in the field of thermoelectricity and focuses particularly on the silicon nanowires as potential thermoelectric materials. The electronic and phonon dispersions are calculated and used for the calculation of thermoelectric properties in...

NanoV: Nanowirebased VLSI Design
08 Sep 2010   Contributor(s):: muzaffer simsir
In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nanotechnologies, nanowires have the edge in the size of circuits and logic arrays that have already been fabricated and experimentally evaluated. For this technology, logiclevel design...

Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010   Contributor(s):: Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowiresRelationship between dispersion relationship and transmission in perfectly ordered wiresBand folding in Si nanowiresTranmisison in disordered wires – relationship to an approximate...

Threshold voltage in a nanowire MOSFET
22 Apr 2010   Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor fieldeffect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...

Nanotechnology Animation Gallery
22 Apr 2010   Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...

ECET 499N Lecture 10: Nanomaterials
12 Apr 2010   Contributor(s):: Helen McNally

Notes on Scattering and Mobility in 1D, 2D, and 3D
06 Nov 2009   Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phononlimited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in nonconfined ones.

Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
21 Sep 2009   Contributor(s):: andrei kolmakov
Quasi 1D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...

Illinois ECE 598EP Lecture 8  Hot Chips: Thermal Conductivity of Solids
24 Jun 2009   Contributor(s):: Eric Pop, Omar N Sobh
Thermal Conductivity of SolidsTopics: Kinetic Theory of Energy Transport Simple Kinetic Theory Assumptions Phonon MFP and Scattering Time Silicon Film Thermal Conductivity Silicon Nanowire Thermal Conductivity Isotope Scattering Electron Thermal Conductivity Thermal Conductivity of Cu and Al

Band Structure Lab: FirstTime User Guide
15 Jun 2009   Contributor(s):: Abhijeet Paul, Benjamin P Haley, Gerhard Klimeck
This document provides useful information about Band Structure Lab. Firsttime users will find basic ideas about the physics behind the tool such as band formation, the Hamiltonian description, and other aspects. Additionally, we provide explanations of the input settings and the results of the...

Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
11 Jun 2009   Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.

KP Nanowire/UTB FET
22 Mar 2009   Contributor(s):: Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method

OMEN Nanowire: FirstTime User Guide
21 Feb 2009   Contributor(s):: SungGeun Kim, Benjamin P Haley, Mathieu Luisier, Saumitra Raj Mehrotra, Gerhard Klimeck
This is the firsttime user guide for OMEN Nanowire. In addition to showing how the tool operates, it briefly explains what the OMEN Nanowire is, what it can do, and the input and output relationship.NCN@Purdue[1] Sung Dae Suk, et. al., IEDM, 2005, "High Performance 5nm radius Twin Silicon...

OMEN Nanowire
02 Sep 2008   Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Fullband 3D quantum transport simulation in nanowire structure

Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008   Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...

Lecture 1: Percolation in Electronic Devices
04 Nov 2008   Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

Percolation Theory
03 Nov 2008   Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

Can we define unique effective masses in Si nanowires?
06 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the numerically calculated dispersion relation. This is clearly illustrated on the example of Si nanowires...