By completing the MOSCap Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand the operation of a Metal-Oxide-Semiconductor using energy band diagrams, b) study the effects of interface traps, work function, oxide thickness, etc. on capacitance-voltage output, and c) understand MOS-C C-V characteristics in low and high frequency limits.
The specific objectives of the MOSCap Lab are:
Recommended Reading
Users who are new to the operation of MOS-Caps should consult the following resources:
1. Rober F. Pierret. (1996). Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley. (See especially chapter 16)
Demo
* MOSCap: First-Time User Guide
* MOSCap Demonstration: MOS Capacitor Simulation
Theoretical Descriptions
* Tutorial_PADRE_Simulation_Tools.pdf (tutorial)
* Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
* Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage
* Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
* ECE 606 Lecture 32: MOS Electrostatics I
* ECE 606 Lecture 33: MOS Electrostatics II
* ECE 606 Lecture 34: MOSCAP Frequency Response
* MOS Capacitors: Theory and Modeling
Tool Verification
* Verification of the Validity of the MOSCap Tool
Examples
* MOSCAP Worked out problems (Basic)
Exercises and Homework Assignments
1. Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
2. Exercise: CV curves for MOS capacitors
Solutions to Exercises
Solutions are provided only to instructors!
Evaluation
* ABACUS: Test for MOSCAP Tool