On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam

Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand …

http://nanohub.org/resources/8023

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam

Mobility degradation due to generation of interface traps, Δµeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there …

http://nanohub.org/resources/4835

Modeling Interface-defect Generation (MIG)

18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad Alam

Analyzes device reliability based on NBTI

http://nanohub.org/resources/1647

Spice3f4

14 Aug 2005 | Tools | Contributor(s): Michael McLennan

General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis

http://nanohub.org/resources/227