## Courses

## nanoHUB-U: Essentials of MOSFETs

This course develops a simple framework for understanding the essential physics of modern nanotransistors and also discusses important technology considerations and circuit applications.

The transistor has been called the greatest invention of the 20th century – it enabled the electronics systems that have shaped the world we live in. Today’s nanotransistors are a high volume, high impact success of the nanotechnology revolution. This is a course on how this scientifically interesting and technologically important device operates.

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and applications. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how modern transistors, specifically MOSFETS, operate. This course covers the traditional theory of MOSFETs with micrometer to sub-micrometer channel lengths, as well as modern, nanoscale MOSFETs with channel lengths of 20 nanometers (0.02 micrometers) or so. The course should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.

This course is part of a Purdue initiative that aims to complement the expertise that students develop with the * breadth at the edges *needed to work effectively in today's multidisciplinary environment. These serious short courses require few prerequisites and provide a general framework that can be filled in with self-study when needed.

#### What you'll learn:

- How to understand MOSFET IV characteristics and device metrics and how to analyze measured transistors characteristics to extract key device parameters.
- The physical operating principles of barrier-controlled transistors such as MOSFETs.
- 1D/2D/3D MOS electrostatics and an appreciation of the need for advanced MOSFET structures such as the FinFET.
- How modern transport theory (the transmission approach) is applied to nanoscale MOSFETs.
- A first look at other transistors and an appreciation of the role that physics-based compact models for MOSFETs play in circuit and system design.

#### Course Syllabus:

**Unit 1: Transistors, compact models, and circuits**

L1.1: Unit 1 Introduction

L1.2: The MOSFET as a black box

L1.3: MOSFET device metrics

L1.4: Compact models

L1.5: Digital circuits

L1.6: Analog/RF circuits

**Unit 2: Essential physics of the MOSFET**

L2.1: Unit 2 Introduction

L2.2: Energy Band View of MOSFETs

L2.3: Traditional IV Theory

L2.4: The Virtual Source model

**Unit 3: MOS Electrostatics**

L3.1: Unit 3 Introduction

L3.2: The depletion approximation

L3.3: The gate voltage and surface potential

L3.4 Flatband voltage

L3.5: Mobile charge: Bulk MOS

L3.6 Mobile charge: ETSOI

L3.7: 2D MOS electrostatics

L3.8: The VS model revisited

L3.9: Unit 3 Summary

**Unit 4: Transmission theory of the MOSFET**

L4.1: Unit 4 Introduction

L4.2: Landauer Approach

L4.4: The ballistic MOSFET

L4.3 Transmission, mean-free-path and mobility

L4.4: Transmission theory of the MOSFET

L4.5: Analysis of experiments

L4.6: Connection to VS model

**Unit 5: Additional topics**

L5.1: Limits of MOSFETs

L5.2: Power MOSFETs

L5.3: High Electron Mobility Transistors (HEMTs)

L5.4: Quick look at bipolar transistors

L5.5: Compact models – another look