Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0

By Shaloo Rakheja1, Dimitri Antoniadis1

Massachusetts Institute of Technology (MIT)

This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

Additional materials available

Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D3MS3K273 - cite this

Licensed under NEEDS Modified CMC License according to these terms


See more compact models using the MIT Virtual Source (MVS) Model

This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and  ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs). The transport model incorporates two separate virtual sources for electrons and holes and is supplemented by a self-consistent channel-charge-partitioning model valid from drift-diffusive to ballistic transport conditions. The model comprehends the asymmetry introduced by different contact resistance for electrons and holes. The AVS model has a limited number of parameters, most of which have a physical meaning and can easily be extracted from device characterization.  The compact model yields continuous current and charges and can easily be used in the design and analysis of circuits and systems implemented with GFETs.

Model Release Components ( Show bundle contents ) Bundle

Key References

1. S. Rakheja, Y. Wu, H. Wang, T. Palacios, D. Antoniadis. An Ambipolar Virtual-Source- Based Charge-Current Compact Model for Nanoscale Graphene Transistors. In IEEE Transactions on Nanotechnology. Accepted.

2. S. Rakheja, H. Wang, T. Palacios, I. Meric, K. Shepard, D.A. Antoniadis. A Unified Charge-Current Compact Model for Ambipolar Operation in Quasi-Ballistic Graphene Transistors: Experimental Verification and Circuit-Analysis Demonstration. In Proceedings of the 2013 IEEE International Electron Devices Meeting (IEDM). Washington, D.C., December 2013.

Cite this work

Researchers should cite this work as follows: