MIT TFET compact model including the impacts of non-idealities 1.0.0

By Redwan Noor Sajjad1, Ujwal Radhakrishna2, Dimitri Antoniadis1

1. Massachusetts Institute of Technology 2. Massachusetts Institute of Technology (MIT)

We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.

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Version 1.0.0 - published on 07 May 2017 doi:10.4231/D3XW47X6W - cite this

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We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface Trap Assisted Tunneling (TAT) and intrinsic band steepness. The model matches several recent experiments on TFETs, provides a conceptual understanding of carrier transport in TFET and a guideline (e.g. requirements for material and device parameters) for achieving steep sub-threshold swing.

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