Tags: device modelling and simulation

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  1. Caterin Salas Redondo

    https://nanohub.org/members/58664

  2. Silvaco Athena - Part 3

    09 Aug 2011 | Contributor(s):: Dragica Vasileska

    This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

  3. michael TSAI

    https://nanohub.org/members/56617

  4. Device Parameters Extraction Within Silvaco Simulation Software

    30 Jul 2011 | Contributor(s):: Dragica Vasileska

    This set of slides explains the extract statements within SILVACO simulation software.

  5. 2011 NCN@Purdue Summer School: Electronics from the Bottom Up

    Workshops | 20 Jul 2011

    click on image for larger versionAlumni Discussion Group: LinkedIn

  6. Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems

    Online Presentations | 20 Jul 2011 | Contributor(s):: J. L. Gray

    Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.

  7. Abdelaali Fargi

    Abdelaali Fargi received his PhD in Physics of Semiconductor Devices and Electronics from Faculty of Sciences of Monastir (Tunisia) in 2016, the Master of Science Degree in Materials Science and...

    https://nanohub.org/members/56303

  8. Electron-Electron Interactions

    Teaching Materials | 20 Jun 2011 | Contributor(s):: Dragica Vasileska

    This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.

  9. Anis DJEDIDI

    https://nanohub.org/members/55735

  10. Maksym Plakhotnyuk

    https://nanohub.org/members/55289

  11. Bagavathi Shivakumar

    https://nanohub.org/members/55079

  12. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    Online Presentations | 11 May 2011 | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  13. Chandramohan Paulraj

    https://nanohub.org/members/54140

  14. Quantum Dot Wave Function (Quantum Dot Lab)

    Animations | 02 Feb 2011 | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

  15. Self-Assembled Quantum Dot Structure (pyramid)

    Animations | 02 Feb 2011 | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

  16. Quantum Dot Wave Function (still image)

    Animations | 31 Jan 2011 | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

  17. Self-Assembled Quantum Dot Wave Structure

    Animations | 31 Jan 2011 | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

  18. Electron Density in a Nanowire

    Animations | 30 Jan 2011 | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

    Electron Density in a circular Silicon nanowire transistor.

  19. Tunneling in an Nanometer-Scaled Transistor

    Animations | 25 Jan 2011 | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

    Electrons tunneling through the gate of an ultra-scaled transistor.

  20. Atomistic Simulations of Reliability

    Teaching Materials | 06 Jul 2010 | Contributor(s):: Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...