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Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
03 Aug 2009 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
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Exercise: CV curves for MOS capacitors
02 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise demonstrates to the students how the low-frequency CV curves in MOS capacitors change with changing the gate workfunction, the oxide thickness and the dielectric constant. It also demonstrates the doping variation of the high-frequency CV curves.NSFNSF
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Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor
02 Mar 2010 | | Contributor(s):: Eric Pop
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Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance
02 Mar 2010 | | Contributor(s):: Eric Pop
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Illinois ECE 440: MOS Capacitor Homework
27 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.
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Illinois Tools: MOCA
28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park
2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures
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Intro to MOS-Capacitor Tool
09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
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MOS Capacitors: Description and Semiclassical Simulation With PADRE
26 Jun 2006 | | Contributor(s):: Dragica Vasileska
Introduction of Quantum-Mechanical Effects in Device Simulation
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MOS Capacitors: Theory and Modeling
18 Jul 2008 | | Contributor(s):: Dragica Vasileska
These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.
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MOS Simulator
21 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
04 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)
04 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
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MOSCap
06 Apr 2006 | | Contributor(s):: Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
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MOSCAP - Theoretical Exercises 1
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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MOSCAP - Theoretical Exercises 2
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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MOSCAP - Theoretical Exercises 3
02 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
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MOSCap: First-Time User Guide
27 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...
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MOSCAP: Theoretical Exercise - High Frequency CV Curves
30 Jun 2009 | | Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
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n-type and p-type biasing regions for MOS capacitors
01 Nov 2018 | | Contributor(s):: Lawrence Norman LeBlanc
This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n- and p-type structures and provides a simple mnemonic for the order of the biasing regions on a...
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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...