Resources (21-40 of 108)

1. ECE 695A Lecture 15: Off-state HCI Degradation

   19 Feb 2013 | | Contributor(s):: Muhammad Alam

   Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions

2. ECE 695A Lecture 15R: Review Questions

   20 Feb 2013 | | Contributor(s):: Muhammad Alam

   Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...

3. ECE 695A Lecture 16: Review Questions

   22 Feb 2013 | | Contributor(s):: Muhammad Alam

   Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly larger...

4. ECE 695A Lecture 16: Temperature Dependence of HCI

   19 Feb 2013 | | Contributor(s):: Muhammad Alam

   Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions

5. ECE 695A Lecture 17: Subthreshold and Idlin Methods

   21 Feb 2013 | | Contributor(s):: Muhammad Alam

6. ECE 695A Lecture 17R: Review Questions

   01 Mar 2013 | | Contributor(s):: Muhammad Alam

   Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...

7. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

   25 Feb 2013 | | Contributor(s):: Muhammad Alam

   Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions

8. ECE 695A Lecture 18R: Review Questions

   01 Mar 2013 | | Contributor(s):: Muhammad Alam

   Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...

9. ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance

   01 Mar 2013 | | Contributor(s):: Muhammad Alam

   Outline:Importance of measuring interface damageElectronicSpinResonance( Aquickreview)Spin Dependent RecombinationElectrically detected spin-resonance and noise- spectroscopyComparing the approachesConclusions

10. ECE 695A Lecture 19R: Review Questions

    04 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between RTN...

11. ECE 695A Lecture 1: Reliability of Nanoelectronic Devices

    11 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions

12. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions

13. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

14. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

15. ECE 695A Lecture 22R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

16. ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

17. ECE 695A Lecture 23R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

18. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions

19. ECE 695A Lecture 24R: Review Questions

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

20. ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions