Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.1.0 - published on 04 Apr 2016 doi:10.4231/D3ZC7RV9X - cite this Last public release: 1.2.0
Licensed under NEEDS Modified CMC License according to these terms
Supporting Docs
Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Verilog-A(VA | 24 KB)
Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Benchmarks(ZIP | 3 KB)- Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Parameters(ZIP | 264 KB)
- Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Experimental Data(ZIP | 113 KB)
Stanford 2D Semiconductor (S2DS) Transistor Model 1.1.0 Manual(PDF | 1 MB)
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.