By Akira Matsudaira1, Saumitra Raj Mehrotra2, Shaikh S. Ahmed3, Gerhard Klimeck2, Dragica Vasileska4

1. University of Illinois at Urbana-Champaign 2. Purdue University 3. Southern Illinois University Carbondale 4. Arizona State University

Capacitance of a MOS device

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Version 1.8 - published on 23 Jul 2014

doi:10.4231/D3736M30D cite this

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2316 CV-curves of a single-gate MOS capacitor
Asked by rezwan refat Open 10
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1603 polysilicon doping concentration?
Asked by kim ji min Open 0
1598 Reference voltage
Asked by Dimitris Birbiliotis Open 0
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1306 C-V characteristic and transient analylsis?
Asked by Ahmed Samir Hamed Open 0
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1067 How to change the semiconductor properties in the input if the default is silicon?
Asked by Krishnakali Chaudhuri Open 0
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984 Temperature dependence
Asked by Andrew Martin Santos Open 1
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658 Work Function/Flat Bias Adjustment?
Asked by Marcela Meza Open 1
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500 what happens in the deep depletion region?
Asked by Samuel Opoku Aboagye Open 2
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323 deep accumulation for small devices carrier density/availability of customizable PADRE
Asked by Philip David Flammer Closed 1
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269 sir i need simulation which is based on my mathematical equation. Here we are just varying the variable and this simulator giving us result. can we do any changes any method for solving this ?
Asked by pankaj zope Closed 1
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