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**Note:** Only nanoelectronic tools are currently represented.

Simulate Nanowire/UTB FETs Using KP method

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

Calculation of the allowed and forbidden states in a periodic potential

Run the community code ABINIT for electronic structure calculations under density functional theory through a convenient graphical user interface

Framework for solving systems of partial differential equations (PDEs) in time and 1, 2, or 3 space dimensions

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

Computes current-voltage (I-V) characteristics and conductance spectrum (G-V) of a molecule sandwiched between two metallic contacts

Easy-to-use interface for designing and analyzing electronic properties of different nano materials

General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis

This tool enables users to explore and teach the basic concepts of P-N junction devices.

Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport

Compute the eigenstates of a particle in a box of various shapes including domes, pyramids and multilayer structures.

Capacitance of a MOS device

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

2D/3D devices under steady state, transient conditions or AC small-signal analysis

Simulates ballistic transport in 2D MOSFET devices

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

Quantum-corrected Monte-Carlo electron transport simulator for two-dimensional MOSFET devices.

Calculates the phonon band structure of carbon nanotubes using the force constant method.

Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires

Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution

Compute the charge density distribution and potential variation inside a MOS structure by using a coarse-grained tight binding model

Compute the strain effects on the thermal properties of bulk crystalline silicon

Analyzes device reliability based on NBTI

This tool simulates E-k and DOS of CNTs and graphene nanoribbons.

Integrated Circuit Fabrication Process Simulation

This module simulates the oxidation flux.

This modules simulates both the standard diffusion and concentration-dependent diffusion.

This tool simulates dopant diffusion coupled with point defects.

Improved program consists of DEMON and SDEMON

A simulation tool for Thin films transistors based on network of nanotubes or nanowires

Predictive model files for future transistor technologies.

Analyze performances of carbon nanotube bundle interconnects

Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

Calculates low field mobility in III-V semiconductors

2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

Transmission and the reflection coefficient of a five, seven, nine, eleven and 2n-segment piece-wise constant potential energy profile

TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.

Simulates 1D heterostructures, including solar cells

3D simulator for silicon nanowire field effect transistors with multiple gates

Explore the influence of strain on first-principles bandstructures of semiconductors.

Estimate circuit level performance and power of novel devices

Simplex Monte Carlo - solves for hot electron and hole distribution functions (DF) given input PADRE solution and mesh files.

Basic Ensemble Monte Carlo code for study of electron transport in bulk GaAs

Simulate Coulomb Blockade through Many-Body Calculations in a single and double quantum dot system

Nanowire classical using Prophet

Visualize different crystal lattices and planes

Calculate the electron & hole density in semiconductors

Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches

Simulate single semiconductor characteristics

Non-equilibrium Green's Function Density Functional Theory Simulator

This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.

Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure

Simulate Electron transport in Single-walled carbon nanotubes using an upwinding discretization of the Boltzmann transport equation in the relaxation time approximation.

Estimate performances of graphene interconnects

This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.

GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials

This tool performs a self-consistent simulation of the current-voltage curve of a metallic single-wall carbon nanotube with Joule heating.

Simulate clusters configurations of nanomagnets

Calculates bound states for square, parabolic, triangular and V-shaped potential energy profile

Path integral calculation of exchange coupling of spins in neighboring quantum dots.

One-stop-shop for teaching semiconductor device education

Simulate 2-D electrons transport in CNTFET

3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors.

Tools to complement Illinois Solid State Electronic Devices Classes

Depletion Approximation for a PN Junction

This tool gives insight into the basic operation of MESFET devices

Poisson-Schrödinger Solver for 1D Heterostructures

One-stop-shop for teaching quantum mechanics for engineers

Simulate spin precession effect in pure silicon

This tool is used for the Advanced Computational Electronics Tool Based Curricula

Simulate 1D RTDs using NEGF.

Full-band 3D quantum transport simulation in nanowire structure

effects of doping in bulk silicon.

An Assembly of TCAD tools for circuit, device, and process simulation

Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using Non-Equilibrium Green's Functions

Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in a 2D Nanocrystalline Composite Structure using Non-Equilibrium Green's Functions

Educational Tools for Classroom and Homework use to introduce nanotechnology concepts

Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation

Simulate field effect carrier mobility in back-gated CNTFET devices at low field

Simulate resistance change of a Voltage-controlled Memristor

Calculations of doped bulk silicon transport data (new version release)