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ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
19 Mar 2013 | | Contributor(s):: Muhammad Alam
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ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...
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ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions
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ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
05 Mar 2013 | | Contributor(s):: Muhammad Alam
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ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between RTN...
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ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Importance of measuring interface damageElectronicSpinResonance( Aquickreview)Spin Dependent RecombinationElectrically detected spin-resonance and noise- spectroscopyComparing the approachesConclusions
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ECE 695A Lecture 17R: Review Questions
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...
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ECE 695A Lecture 18R: Review Questions
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...
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ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions
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ECE 695A Lecture 16: Review Questions
22 Feb 2013 | | Contributor(s):: Muhammad Alam
Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly larger...
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ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | | Contributor(s):: Muhammad Alam
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ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...
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ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices
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ECE 695A Lecture 14b: Voltage Dependent HCI II
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices
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ECE 695A Lecture 15: Off-state HCI Degradation
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions
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ECE 695A Lecture 16: Temperature Dependence of HCI
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions
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ECE 695A Lecture 14R: Review Questions
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...
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ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions
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ECE 695A Lecture 13R: Review Questions
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...
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ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the difference between coordination and composition?Is periodicity essential for a defect-free structure?Why can’t the amorphous material have arbitrary ring distribution?How does Temperature enter in Maxwell’s relationship?Do you expect more or less defect for...