Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT

Fall 2008

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part 3, we discuss circuit and systems issues and then examine strained silicon, III-V HEMTs, and nanowire transistors. The use of computer simulation to examine device issues is an integral part of the course.

Syllabus:
2008/08/05328/ece612-f08-syllabus.pdf

Text:

Fundamentals of Modern VLSI Devices,
Yuan Taur and Tak H. Ning, Cambridge Univ. Press
ISBN: 0 521 55056 4 (hardback) 0 521 55959 6 (paperback)

Advanced Semiconductor Fundamentals, 2nd Edition
R.F. Pierret, Prentice Hall, ISBN 0-13-061792-X

Researchers should cite this work as follows:

• Mark Lundstrom (2008), "ECE 612: Nanoscale Transistors (Fall 2008)," https://nanohub.org/resources/5328.

  BibTex | EndNote

1. nanoelectronics
2. nanotransistors
3. NCN Group - Nanoelectronics
4. transistors