By Shaikh S. Ahmed1; Saumitra Raj Mehrotra2; SungGeun Kim2; Matteo Mannino2; Gerhard Klimeck2; Dragica Vasileska3; Xufeng Wang2; Himadri Pal2; Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Version 1.9.1 - published on 06 Dec 2017

doi:10.4231/D34T6F54G cite this

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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET). MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. Teachnig Material and Exercises: Upgrades with subsequent versions:
  • 1.8.5: Minor fix regarding the display of 1D plots for the Final Bias.
  • 1.8.4: Minor fix regarding the display of 1D plots.
  • 1.8.3: Increased the axes limit for 1D plots.
  • 1.8.2: Increased Lc (Lsd) limit to 100 um.
  • 1.8.1: Fixed minor bug for SOI-MOSFET simulations.
  • 1.8: Fixed for oxide dielectric constant (was redundant parameter before).
  • 1.6: Added Surface Charge-Vg plot for NMOS and PMOS.
  • 1.5: Improved meshing for Imapct Ionization simulations.
  • 1.4: Fixed axes units. Added option for Energy balance transport
  • 1.3.1: Added status bar for running simulation.
  • 1.3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman (2017), "MOSFet," (DOI: 10.4231/D34T6F54G).

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